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 STTH8006
Turbo 2 ultrafast high voltage rectifier
Main product characteristics
IF(AV) VRRM Tj VF (typ) trr (max) 80 A 600 V 175 C 1.02 V 70 ns
K A
Features and benefits

DO-247 STTH8006W
Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses
Description
The STTH8006, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Thanks to its low VF characteristics, this device exhibits high performances in freewheeling applications. Table 1.
Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj
Order Code
Part number STTH8006W Marking STTH8006W
Absolute ratings (limiting values, at Tamb = 25 C, unless otherwise specified)
Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 75 C = 0.5 Value 600 113 80 500 -65 to + 175 175 Unit V A A A C C
tp = 10 ms sinusoidal
December 2006
Rev 1
www.st.com
1/6
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Characteristics
STTH8006
1
Table 2.
Symbol Rth(j-c)
Characteristics
Thermal resistance
Parameter Junction to case Value (max). 0.75 Unit C/W
Table 3.
Symbol IR(1) VF(2)
Static electrical characteristics
Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 150 C Forward voltage drop Tj = 25 C Tj = 150 C VR = VRRM Min. Typ Max. 50 A 160 1600 1.60 IF = 80 A V 1.02 1.30 Unit
1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 %
To evaluate the conduction losses use the following equation: P = 0.98 x IF(AV) + 0.004 IF2(RMS) Table 4.
Symbol trr IRM tfr VFP
Dynamic characterstics
Parameter Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25C Tj = 125C Tj = 25C Tj = 25C Test conditions IF = 0.5 A Irr = 0.25 A IR =1 A IF = 1 A dIF/dt = 50 A/s VR =30 V VR = 400 V IF = 80 A dIF/dt = 100 A/s IF = 80 A dIF/dt = 200 A/s VFR = 1.1 x VFmax IF = 80 A dIF/dt = 200 A/s VFR = 1.1 x VFmax 3.7 75 14 Min. Typ Max. 70 ns 105 19 600 A ns V Unit
Figure 1.
P(W)
140
Conduction losses versus average forward current
=0.5 =1
Figure 2.
IFM(A)
200 180
Forward voltage drop versus forward current
120 100
=0.05 =0.1
=0.2
160 140 120 100
Tj=150C (Maximum values)
80 60 40 20
Tj=150C (Typical values)
Tj=25C (Maximum values)
80 60
T
40
IF(AV)(A)
0 0 10 20 30 40 50 60 70
=tp/T
80 90
tp
20 0
100
VFM(V)
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.00
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STTH8006
Characteristics
Figure 3.
Relative variation of thermal impedance junction to case versus pulse duration
Figure 4.
Peak reverse recovery current versus dIF/dt (typical values)
1.0 0.9 0.8 0.7 0.6 0.5
Zth(j-c)/Rth(j-c)
Single pulse
IRM(A)
55 50 45 40 35 30 25
IF=80A VR=400V Tj=125C
0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 1.E+00
20 15 10
tp(s)
5 0 0 50 100 150
dIF/dt(A/s)
200 250 300 350 400 450 500
Figure 5.
trr(ns)
Reverse recovery time versus dIF/dt Figure 6. (typical values)
3.0
IF = 80A VR=400V Tj=125C
Reverse recovery charges versus dIF/dt (typical values)
800 700 600 500 400 300 200 100
Qrr(C)
IF = 80A VR=400V Tj=125C
2.5
2.0
1.5
1.0
0.5
dIF/dt(A/s)
0 0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/s)
0.0 0 100 200 300 400 500
Figure 7.
Relative variations of dynamic parameters versus junction temperature
IF=80A VR=400V Reference: Tj=125C
Figure 8.
Transient peak forward voltage versus dIF/dt (typical values)
1.4 1.2 1.0 0.8
QRR
VFP(V)
8 7 6 5 4 3
IRM
IF=80A Tj=125C
0.6 0.4 0.2
tRR
2
Tj(C)
0.0 25 50 75 100 125
1 0 0 50 100 150
dIF/dt(A/s)
200 250 300 350 400 450 500
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Package information
STTH8006
Figure 9.
Junction capacitance versus reverse voltage applied (typical values)
C(pF)
1000
F=1MHz VOSC=30mVRMS Tj=25C
100
VR(V)
10 1 10 100 1000
2
Package information

Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm. Maximum torque value: 1.0 Nm. DO-247 dimensions
DIMENSIONS REF
V
Table 5.
Millimeters Min Typ Max Min
Inches Typ Max 0.203 0.102 0.031 0.055 0.078 0.094 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143
V
Dia.
H
A
L5
L L2 L4 F2 L3 F3 V2 F G M E
L1 D
A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F2 2.00 F3 2.00 2.40 0.078 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139
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STTH8006
Ordering information In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
3
Ordering information
Part number STTH8006W Marking STTH8006W Package DO-247 Weight 4.40 g Base qty 30 Delivery mode Tube
4
Revision history
Date 15-Dec-2006 Revision 1 Initial release. Changes
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STTH8006
Please Read Carefully:
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